features ?continuous wave (cw) mqw dfb laser ?16dbm output power available at c band itu-t wavelengths between 1528.77-1569.99nm ?polarization preserving (panda) fiber built-in tec, thermistor, monitor pd and optical isolation applications this laser is intended for use in 2.5 and 10 gb/s long haul dwdm transmission systems. description the multiple quantum well (mqw) laser offers high power (16dbm)cw operation, at selected c-band itu-t grid wavelengths. it is packaged in a ?utterfly?type module with a built in thermistor, tec, monitor pd, and optical isolator. this laser is designed for use with external modulation components (such as linb0 3 modulators). parameter laser forward current photodiode reverse voltage cooler voltage symbol condition i f v dr v c 480 20 5.0 ratings v photodiode forward current i pf 10 ma v cw optical output power p f 50 cw mw ma laser reverse voltage v r 2 - - - - note (1) v unit absolute maximum ratings (t c =25 c) cooler current i c 2.0 a - - storage temperature t stg -40 to +85 c operating case temperature t op 0 to +70 c edition 1.0 march 2001 1 1,550nm mqw-dfb continuous wave laser fld5f15cx-h
1,550nm mqw-dfb continuous wave laser fld5f15cx-h 2 parameter symbol laser set temperature t set relative intensity noise rin conditions - cw, pf=40mw, orl>40db, f=dc-7.5ghz t l =tset, tc=+70 c, pf=40mw t l = tset, tc=+70 c, pf=40mw tc, t l =25 c tc, t l =25 c unit c min. 15 limits db/hz -140 - peak wavelength p note (3) nm 35 - optical output power p f cw, tc=0 to +70 c mw - 40 - slope efficiency cw, pf=40mw, orl>40db cw, pf=40mw, orl>40db cw, pf=40mw, orl>40db cw, pf=40mw, orl>40db mw/ma tracking error (note 1) te im=constant, tc=0 to +70 c db +1.0 -0.5 - monitor current i m monitor dark current monitor capacitance idm c t pf=40mw v pd =5v v pd =5v, f=1 mhz ma na pf 4.0 100 10 0.1 - - - - - wavelength stability with case temperature - - pm/ c +/-2 -- side mode suppression sr db - 35 - spectral width (-3db) ? mhz 10 -5 - cooler current ic a 1.8 -- cooler voltage vc v 4.8 -- thermistor resistance rth k ? 10.5 9.5 10.0 thermistor b constant (note 2) bk 3,630 3,270 3,450 optical isolation i s tc=0 to +70 c db - 22 - extinction ratio te/tm cw, pf=40mw db - 20 - operating forward current i op cw, pf=40mw ma 400 -- threshold current i th cw ma 345 - forward voltage v f cw, i f =30 ma, pin 3,13 v - - 3.0 - 0.14 - max. typ. note 1. te=10*log[pf(tc)/pf(25)] note 2. relation between resistance and temperature ( k) is: rth (t) = rth (25)*exp[b(1/t-1/298)] note 3. the selected wavelength is available in accordance with figure 5. optical and electrical characteristics at (t l =t set , t c =25 c, bol, unless otherwise specified)
3 1,550nm mqw-dfb continuous wave laser fld5f15cx-h fig.4 spectrum wavelength (nm) relative intensity (db) fig. 2 temperature dependance of wavelength laser temperature, t ld ( c) wavelength (nm) 1547 1548 1549 1550 1551 10 15 20 25 30 35 40 fig. 1 forward current vs output power forward current, if (ma) output power, pf (mw) 30 20 10 0 40 0 200 100 300 fig. 3 cooler voltage -current case temperature ( c) cooler voltage, v c (v) cooler current, i c (a) -1.0 5.0 2.0 3.0 4.0 0.0 1.0 -1.0 5.0 1540 1550 1560 -80 -60 -40 -20 0 2.0 3.0 4.0 0.0 1.0 02030 10 40 50 60 70 80
4 fig. 5 wavelength table part number fld5f15cx-h9610 fld5f15cx-h9600 fld5f15cx-h9590 fld5f15cx-h9580 fld5f15cx-h9570 fld5f15cx-h9560 fld5f15cx-h9550 fld5f15cx-h9540 fld5f15cx-h9530 fld5f15cx-h9520 fld5f15cx-h9510 fld5f15cx-h9500 fld5f15cx-h9490 fld5f15cx-h9480 fld5f15cx-h9470 1528.77 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 1544.53 1545.32 1546.12 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 wavelength (nm) (tl=tset) (in vacuum) tolerance (nm) fld5f15cx-h9460 fld5f15cx-h9450 fld5f15cx-h9440 fld5f15cx-h9430 fld5f15cx-h9420 fld5f15cx-h9410 fld5f15cx-h9400 fld5f15cx-h9390 fld5f15cx-h9380 fld5f15cx-h9370 fld5f15cx-h9360 fld5f15cx-h9350 fld5f15cx-h9340 fld5f15cx-h9330 fld5f15cx-h9320 fld5f15cx-h9310 fld5f15cx-h9300 fld5f15cx-h9290 fld5f15cx-h9280 fld5f15cx-h9270 fld5f15cx-h9260 fld5f15cx-h9250 fld5f15cx-h9240 fld5f15cx-h9230 fld5f15cx-h9220 fld5f15cx-h9210 fld5f15cx-h9200 fld5f15cx-h9190 fld5f15cx-h9180 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.55 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 fld5f15cx-h9170 fld5f15cx-h9160 fld5f15cx-h9150 fld5f15cx-h9140 fld5f15cx-h9130 fld5f15cx-h9120 FLD5F15CX-H9110 fld5f15cx-h9100 1563.86 1564.67 1565.49 1566.31 1567.13 1567.95 1568.77 1569.59 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 1,550nm mqw-dfb continuous wave laser fld5f15cx-h note this device is not available with a fiber polarization axis aligned connector. the attached fujitsu connector is only for use at incoming inspection. a fusion splice is the recommended method for connecting this laser to an external modulator.
tec th 10 k ? top view pin 7 14.6 20.83 22.0 26.04 pin 8 4- 2.67 pin 1 5.2 8.89 12.7 0.9 13 all dimensions are in millimeters. 11.6 29.97 pin 14 2.54 14-0.5 17.24 15.2 0.5 1.70 5.41 5.47 8.17 0.5 1.70 4.15 5.47 23 *l p o 1. temperature monitor 2. temperature monitor 3. laser dc bias (-) 4. monitor (anode) 5. monitor (cathode) 6. tehp (+) 7. tehp (-) 8. case ground 9. case ground 10. n.c. 11. laser ground 12. laser modulation (-) 13. case ground 14. n.c. pin # function * pigtail length (l) shall be specified in the detail (individual) specification, if it is special. l=1500 min. for standard (preliminary) 15.24 7654321 8 9 10 11 12 13 14 ?x?package unit: mm fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1999 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0199m200 1,550nm mqw-dfb continuous wave laser fld5f15cx-h 5 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-23770226 fax: +852-23763269 fujitsu quantum devices limited business development division 11th floor, hachioji daiichi-seimei bldg. 3-20-6 myojin-cho hachioji-city, tokyo 192-0046, japan tel: +81-426-43-5885 fax: +81-426-43-5582
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